The effect of Sn concentration on photoelectrochemical properties of hematite
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Abstract
Hematite-based thin films obtained by MOCVD technique for use as photoanodes have been studied for photoelectrochemical water oxidation. The substrate contained a n-type dopant Sn has been shown to improve the photocatalytic activity of hematite photoanodes at 600°C. In this study the evaluation of annealing process at high temperature was used for evaluating the hematite thin films grown and it effect on the hematite properties. The XRD and XPS characterization shown that the hematite crystallite size increases and the Sn atoms diffuse into the hematite structure which may contribute to the low photocurrent observed in these films annealed at 1000 °C. The hematite annealed at 600 °C exhibited a high a photocurrent density of 4.98 mA/cm2 at 1.23V vs RHE